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                                                                                                2SD1991A(NPN)
                                                                                                 TO-92 Bipolar Transistors


                                                                    1. EMITTER                                TO-92
                                                                    2. COLLECTOR

                                                                    3. BASE




Features
      High foward current transfer ratio hFE
      Low collector to emitter saturation voltage VCE(sat).
      Allowing supply with the radial taping.

MAXIMUM RATINGS (TA=25 unless otherwise noted)
  Symbol                  Parameter                       Value          Units
 VCBO         Collector-Base Voltage                       60             V
 VCEO         Collector-Emitter Voltage                    50             V
 VEBO         Emitter-Base Voltage                         7              V
 IC           Collector Current -Continuous                100           mA                  Dimensions in inches and (millimeters)

 PC           Collector Power Dissipation                  400           mW
 TJ           Junction Temperature                         150            
 Tstg         Storage Temperature                       -55-150           

ELECTRICAL CHARACTERISTICS (Tamb=25 uless otherwise specified)

            Parameter                           Symbol            Test     conditions                   MIN     TYP        MAX   UNIT

Collector-base breakdown voltage                V(BR)CBO        IC=10A,IE=0                              60                       V

Collector-emitter breakdown voltage             V(BR)CEO        IC=2mA,IB=0                              50                       V

Emitter-base breakdown voltage                  V(BR)EBO        IE=10A,IC=0                               7                       V

Collector cut-off current                         ICBO          VCB=20V,IE=0                                                1     A

Emitter cut-off current                           IEBO          VEB=7V,IC=0                                                 1     A

                                                 hFE(1)         VCE=10V,IC=2mA                          160                460
DC current gain
                                                 hFE(2)         VCE=2V,IC=100mA                          90

Collector-emitter saturation voltage            VCE(sat)        IC=100mA,IB=10mA                                           0.3    V

Transition frequency                               fT           VCE=10V,IC=2mA,f=200MHz                          150             MHz

Collector output capacitance                      Cob           VCB=10V,IE=0,f=1MHz                              3.5              pF



CLASSIFICATION OF           hFE(1)
Rank                                        Q                                           R                              S

Range                                  160-260                                     210-340                         290-460
                          2SD1991A(NPN)
                          TO-92 Bipolar Transistors



Typical Characteristics
2SD1991A(NPN)
TO-92 Bipolar Transistors

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