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                                                                                               2SD2413
                                                                                       SOT-89 Transistor(NPN)
                                                        1. BASE


                            1                           2. COLLECTOR                                SOT-89
                                2
                                                                                                                  4.6
                                                                                                                                     B
                                    3                   3. EMITTER                    1.6
                                                                                                                  4.4
                                                                                                                  1.8
                                                                                      1.4                         1.4



 Features                                                                                                                         2.6 4.25
                                                                                                                                  2.4 3.75

        High collector to base voltage VCBO                                                            0.8
                                                                                                       MIN
        High collector to emitter voltage VCEO                                                                        0.53
                                                                                    0.44                       0.48 0.40
                                                                                                                    2x)
        Large collector power dissipation PC                                        0.37
                                                                                            0.13   B           0.35
                                                                                                              1.5
        Low collector to emitter saturation voltage VCE(sat)                                                      3.0


                                                                                Dimensions in inches and (millimeters)
 Marking:1S

 MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol              Parameter              Value      Units
 VCBO      Collector-Base Voltage            400         V
 VCEO      Collector-Emitter Voltage         400         V
 VEBO      Emitter-Base Voltage                5         V
 IC        Collector Current -Continuous     100        mA
 PC        Collector Power Dissipation       500        mW
 TJ        Junction Temperature              150         
 Tstg      Storage Temperature             -55-150       

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

          Parameter                        Symbol              Test    conditions              MIN           TYP        MAX              UNIT

Collector-base breakdown voltage           V(BR)CBO   IC=100A, IE=0                            400                                           V

Collector-emitter breakdown voltage        V(BR)CEO   IC=0.5mA, IB=0                           400                                           V

Emitter-base breakdown voltage             V(BR)EBO   IE=100A, IC=0                                5                                         V

Collector cut-off current                    ICBO     VCB=400V, IE=0                                                         50              A

Emitter cut-off current                      IEBO     VEB=5V, IC=0                                                           50              A

DC current gain                              hFE      VCE=5V, IC=30mA                              30

Collector-emitter saturation voltage       VCE(sat)   IC=50mA, IB=5mA                                                    1.5                 V

Base-emitter saturation voltage            VBE(sat)   IC=50mA, IB=5mA                                                    1.5                 V

Transition frequency                          fT      VCE=30V, IC=20mA, f=200MHz                             40                          MHz

Collector output capacitance                 Cob      VCB = 30V, IE=0, f=1MHz                                                7               pF
                              2SD2413
                          SOT-89 Transistor(NPN)


Typical Characteristics

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