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                                                                                               2SD2118(NPN)
                                                                                             TO-251/TO-252-2L Transistor

                                                                                                       TO-251

                                                            1.BASE


                                                            2.COLLECTOR


                                                            3.EMITTER

                       1    2 3

Features
       Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A)
       Excellent DC current gain characteristics.

MAXIMUM RATINGS (TA=25 unless otherwise noted)                                                         TO-252-2L

 Symbol                    Parameter                 Value           Units
VCBO           Collector-Base Voltage                  50               V
VCEO           Collector-Emitter Voltage               20               V
VEBO           Emitter-Base Voltage                     6               V
IC             Collector Current -Continuous            5               A
PC             Collector Power Dissipation              1               W
TJ             Junction Temperature                   150               
Tstg           Storage Temperature                  -55-150                               Dimensions in inches and (millimeters)


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                           Symbol            Test    conditions              MIN         TYP   MAX    UNIT

 Collector-base breakdown voltage                  V(BR)CBO       IC=50

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