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2SD2150
SOT-89 Transistor(NPN)
1. BASE
2. COLLECTOR
3. EMITTER SOT-89
4.6
B
Features
4.4
1.6
1.8
1.4 1.4
Excellent current-to-gain characteristics 2.6 4.25
2.4 3.75
Low collector saturation voltage VCE(sat)
0.8
VCE(sat)=0.5V(max) for IC/IB=2A/0.1A MIN
0.53
0.44 0.48 0.40
0.13 B 2x)
0.37 0.35
1.5
3.0
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =50uA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 6 V
Collector cut-off current ICBO VCB=30V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
DC current gain hFE * VCE=2V, IC=100mA 180 560
*
Collector-emitter saturation voltage VCE(sat) IC=2A, IB=100mA 0.5 V
VCE=2V,IC=500mA
Transition frequency fT* 290 MHz
f=100MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 25 pF
*Pulse test: tp300S, 0.02.
CLASSIFICATION OF hFE
Rank R S
Range 180-390 270-560
Marking CFR CFS
2SD2150
SOT-89 Transistor(NPN)
Typical Characteristics
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