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                                                                                                   2SD313(NPN)
                                                                                                    TO-220 Transistor


                                                1. BASE
                                                                                                             TO-220

                                                2. COLLECTOR

                                                3. EMITTER
                                         3
                                     2
 Features
                                1


         Low Collector-Emitter Saturation Voltage
         Vce(sat)=1V(MAX)@IC=2A,IB=0.2A
         DC Current Gain hFE=40~320@IC=1A
         Complementray to PNP 2SB507

 MAXIMUM RATINGS (TA=25 unless otherwise noted)

        Symbol               Parameter                    Value         Units                 Dimensions in inches and (millimeters)
 VCBO              Collector-Base Voltage                    60             V
 VCEO              Collector-Emitter Voltage                 60             V
 VEBO              Emitter-Base Voltage                      5              V
 IC                Collector Current -Continuous              3             A
 PC                Collector Power Dissipation             1.75             W
 TJ                Junction Temperature                      150            
 Tstg              Storage Temperature                    -55-150           

ELECTRICAL CHARACTERISTICS (Tamb=25                                unless       otherwise     specified)

            Parameter                          Symbol                Test       conditions             MIN    TYP     MAX     UNIT

Collector-base breakdown voltage               V(BR)CBO   IC=100A, IE=0                                60                      V

Collector-emitter breakdown voltage            V(BR)CEO   IC=1mA, IB=0                                 60                      V

Emitter-base breakdown voltage                 V(BR)EBO   IE=100A, IC=0                                 5                      V

Collector cut-off current                        ICBO     VCB=60V, IE=0                                               100     A

Collector cut-off current                        ICEO     VCE=60V, IE=0                                                1      mA

Emitter cut-off current                          IEBO     VEB=4V, IC=0                                                100     A

                                                hFE(1)    VCE=2V, IC=1A                                40             320
DC current gain
                                                hFE(2)    VCE=2V, IC=0.1A                              40

Collector-emitter saturation voltage           VCE(sat)   IC=2A, IB=200mA                                              1       V

Base-emitter voltage                             VBE      VCE=2V, IC=1A                                               1.5      V

Transition frequency                              fT      VCE=5V, IC=500mA                                     8              MHz

Collector output capacitance                     Cob      VCB=10V, IE=0,f=1MHz                                 65             pF


CLASSIFICATION OF           hFE(1)
Rank                                     C                          D                          E                       F

Range                                40-80                        60-120                     100-200                160-320
                          2SD313(NPN)
                          TO-220 Transistor


Typical Characteristics




Typical Characteristics

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