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2SD667/2SD667A
TO-92MOD Transistor (NPN)
TO-92MOD
1. EMITTER 5.800
1 6.200
2 2. COLLECTOR
3
8.400
3. BASE 8.800
Features 0.900
1.100
0.400
Low frequency power amplifier 0.600
Complementary pair with 2SB647/A 13.800
14.200
MAXIMUM RATINGS (TA=25 unless otherwise noted)
1.500 TYP
2.900
Symbol Parameter Value Units 3.100
0.000 1.600
VCBO Collector- Base Voltage 120 V 0.380
VCEO Collector-Emitter Voltage 2SD667 80 0.400 4.700
V 0.500 5.100
2SD667A 100
1.730
VEBO Emitter-Base Voltage 5 V 4.000 2.030
IC Collector Current -Continuous 1 A Dimensions in inches and (millimeters)
PC Collector Power Dissipation 900 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 120 V
2SD667 80 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
2SD667A 100 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 5 V
Collector cut-off current ICBO VCB=100V,IE=0 10 A
Emitter cut-off current IEBO VEB=4V,IC=0 10 A
2SD667 60 320
hFE(1) VCE=5V,IC=150mA
DC current gain 2SD667A 60 200
hFE(2) VCE=5V,IC=500mA 30
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 1 V
Base-emitter voltage VBE VCE=5V,IC=150mA 1.5 V
Transition frequency fT VCE=5V,IC=150mA 140 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 12 pF
CLASSIFICATION OF hFE(1)
Rank B C D
2SD667 60-120 100-200 160-320
Range
2SD667A 60-120 100-200
2SD667/2SD667A
TO-92MOD Transistor (NPN)
Typical Characteristics
2SD667/2SD667A
TO-92MOD Transistor (NPN)
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