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                                                                                     2SD879(NPN)
                                                                                     TO-92 Bipolar Transistors


                                                             1. EMITTER                      TO-92
                                                             2. COLLECTOR

                                                             3. BASE



Features
          In applications where two NiCd batteries are used to provide
          2.4V, two 2SD879s are used.
          The charge time is approximately 1 second faster Than that of
          germanium transistors.
          Less power dissipation because of low Collector-to-Emitter
          Voltage VCE(sat), permitting more flashes of light to be emitted.
          Small package and large allowable collector dissipation (TO-92,
          PC=750mW).
          Large current capacity and highly resistant to break-down.
          Excellent linearity of hFE in the region from low current to high
                                                                            Dimensions in inches and (millimeters)
          current. Power amplifier applications

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol                 Parameter             Value              Units
VCBO        Collector-Base Voltage            30                  V
VCEO                                          10                  V
            Collector-Emitter Voltage
VCEX                                          20                  V
VEBO        Emitter-Base Voltage               6                  V
IC          Collector Current 

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