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                                                                                                      3DD13005(NPN)
                                                                                                           TO-220 Transistor

                                                                                                                    TO-220
                                                             1. BASE

                                                             2. COLLECTOR

                                                             3. EMITTER

                                               3
                                           2
                                       1
Features
       power switching applications
MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol                   Parameter                           Value      Units
VCBO           Collector-Base Voltage                         700         V
VCEO           Collector-Emitter Voltage                      400         V
VEBO           Emitter-Base Voltage                            9          V                         Dimensions in inches and (millimeters)
IC             Collector Current -Continuous                   4          A
PC             Collector Power Dissipation                     2          W
TJ             Junction Temperature                           150         
Tstg           Storage Temperature                       -55-150          

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                           Symbol                     Test    conditions            MIN      TYP      MAX      UNIT

Collector-base breakdown voltage                   V(BR)CBO         IC= 1mA, IE=0                            700                            V
Collector-emitter              breakdown           V(BR)CEO         IC= 10mA, IB=0                           400                            V

Emitter-base breakdown voltage                     V(BR)EBO         IE= 1mA, IC=0                             9                             V

Collector cut-off current                              ICBO         VCB= 700V, IE=0                                            1        mA

Collector cut-off current                              ICEO         VCE= 400V, IB=0                                           0.1       mA

Emitter cut-off current                                IEBO         VEB=7V, IC=0                                              0.05      mA

                                                       hFE1         VCE= 5V, IC= 1A                          10               60

DC current gain                                        hFE2         VCE= 5V, IC= 10mA                         5

                                                       hFE3         VCE= 5V, IC= 2A                           8               40

                                                   VCE (sat)1       IC=1A, IB=0.2A                                            0.3           V
Collector-emitter saturation voltage
                                                   VCE (sat)2       IC=4A, IB=1A                                              0.8           V

Base-emitter saturation voltage                    VBE (sat)        IC=2A, IB=0.5A                                            1.6           V

Transition Frequency                                    fT          VCE=10V, IC=500mA, f =1MHz                5                         MHz
Fall time                                               tf          IB1=-IB2=0.4A, IC=2A, VCC=120V                            0.6           

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