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                                                                                    AM80610-030
                                           RF & MICROWAVE TRANSISTORS
                                      UHF COMMUNICATIONS APPLICATIONS


.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    INPUT/OUTPUT MATCHING

.   METAL/CERAMIC HERMETIC PACKAGE
    POUT = 30 W MIN. WITH 8.5 dB GAIN

                                                                      .400 x .400 2NLF L (S042)
                                                                          hermetically sealed

                                                               ORDER CODE                       BRANDING
                                                                AM80610-030                      80610-30




DESCRIPTION                                                             PIN CONNECTION
The AM80610-030 is a high power, common
base NPN silicon bipolar device optimized for
CW operation in the 620 - 960 MHz frequency
range.
AM80610-030 utilizes a rugged, overlay, emitter-
ballasted L-Band die geometry to achieve high
gain and collector efficiency and is suitable for
driver or output stage use in Class C power am-
plifiers. Typical applications include military com-
munications, ECM, and test equipment.
The AM80610-030 is provided in the industry-
standard, metal/ceramic AMPACTM hermetic                             1. Collector           3. Emitter
package.                                                             2. Base                4. Base



ABSOLUTE MAXIMUM RATINGS (T case = 25

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