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                                                                                  BUT92

                               FAST-SWITCHING POWER TRANSISTOR
s   SGS-THOMSON PREFERRED SALESTYPE
s   NPN TRANSISTOR
s   hFE > 10 AT IC =35A
s   HIGH EFFICIENCY SWITCHING
s   VERY LOW SATURATION VOLTAGE
s   RECTANGULAR SAFE OPERATING AREA
s   WIDE ACCIDENTAL OVERLOAD AREA

APPLICATIONS
                                                                  1
s UNINTERRUPTABLE POWER SUPPLY                                            2
s SWITCH MODE POWER SUPPLIES

s MOTOR CONTROL
                                                                      TO-3
DESCRIPTION                                                       (version "S")
The BUT92 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
                                                         INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                         Value            Unit
     V CEV   Collector-Emitter Voltage (V BE = -1.5 V)              350               V
     V CEO   Collector-Emitter Voltage (I B = 0)                    250               V
     V EBO   Emitter-Base Voltage (I C = 0)                           7               V
      IE     Emitter Current                                          50              A
     I EM    Emitter Peak Current                                     75              A
      IB     Base Current                                             10              A
     I BM    Base Peak Current                                        15              A
     P tot   Total Power Dissipation at T case  25 Co
                                                                    250               W
                                                                                      o
     T stg   Storage Temperature                                 -65 to 200               C
                                                                                      o
      Tj     Junction Temperature                                   200                   C


June 1997                                                                                     1/4
BUT92

THERMAL DATA
                                                                                                                   o
  R thj-case     Thermal Resistance Junction-case                                      Max           0.7               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                             Test Conditions                  Min.   Typ.   Max.   Unit
       I CER     Collector Cut-off             V CE = V CEV                                                 0.4    mA
                                                                     o
                 Current (R BE = 10 )          V CE = V CEV T c = 100 C                                      4     mA
       I CEV     Collector Cut-off             V CE = V CEV V BE = -1.5V                                    0.2    mA
                 Current                       V CE = V CEV V BE = -1.5V T c = 100 o C                       2     mA
       I EBO     Emitter Cut-off               V EB = 7 V                                                    1     mA
                 Current (I C = 0)
 V CEO(sus)  Collector-Emitter                 I C = 0.2 A     L = 25 mH                      250                      V
             Sustaining Voltage
      V EB0      Emitter-Base Voltage          I E = 50 mA                                     7                       V
                 (IC = 0)
  V CE(sat)      Collector-Emitter             I C = 35 A      IB = 3.5 A                             0.8   1.2        V
                 Saturation Voltage            I C = 35 A      IB = 3.5 A     T j = 100 o C          1.25   1.9        V
  V BE(sat)      Base-Emitter                  I C = 35 A      IB = 3.5 A                            1.2    1.5        V
                 Saturation Voltage            I C = 35 A      IB = 3.5 A     T j = 100 o C          1.2    1.5        V
      di C /dt   Rated of Rise on-state        V CC = 200V I B1 = 5.25 A R C = 0              125    200           A/

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