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                                                                                                MSC81035M
                                                  RF & MICROWAVE TRANSISTORS
                                                         AVIONICS APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
     :1 VSWR CAPABILITY

.
.
    LOW THERMAL RESISTANCE
    INPUT MATCHING

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE
    P OUT = 35 W MIN. WITH 10.7 dB GAIN
                                                                                      .280 2LFL (S068)
                                                                                         epoxy sealed
                                                                            ORDER CODE                        BRANDING
                                                                             MSC81035M                          81035M



                                                                                    PIN CONNECTION
DESCRIPTION
The MSC81035M is a medium power Class C
transistor designed specifically for pulsed L-Band
avionics applications. This device is a direct re-
placement for the MSC1035M. MSC81035M of-
fers improved saturated ouput power and collec-
tor efficiency based on the test circuit described
herein.
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high reli-
ability and product consistency.
The MSC81035M is housed in the IMPACTM                                           1. Collector           3. Emitter
package with internal input matching.                                            2. Base                4. Base


ABSOLUTE MAXIMUM RATINGS (T case = 25 

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