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                                                                               SGSIF344
                                                                               SGSIF444
                                             HIGH VOLTAGE FAST-SWITCHING
                                                  NPN POWER TRANSISTORS
s    SGSIF344 IS SGS-THOMSON PREFERRED
     SALESTYPE
s    HIGH VOLTAGE CAPABILITY
s    VERY HIGH SWITCHING SPEED
s    LOW BASE-DRIVE REQUIREMENTS

APPLICATIONS:
s SWITCH MODE POWER SUPPLIES
s HORIZONTAL DEFLECTION FOR COLOUR                                       3                         3
                                                                     2                        2
  TVS AND MONITORS                                               1                        1

DESCRIPTION
The SGSIF344 and SGSIF444 are manufactured             ISOWATT220              ISOWATT218
using Multiepitaxial Mesa technology for
cost-effective high performance and uses a
Hollow Emitter structure to enhance switching
speeds.
These transistors are available in ISOWATT220
and ISOWATT218 plastic package respectively.         INTERNAL SCHEMATIC DIAGRAM
The SGSF series is designed for high speed
switching applications such as power supplies
and horizontal deflection circuits in TVs and
monitors.




ABSOLUTE MAXIMUM RATINGS
    Symb ol                      Parameter                           Valu e                   Un it
                                                      SGSIF344                SGSIF 444
     V CES    Collector-Emitter Voltage (VBE = 0)                    1200                      V
     V CEO    Collector-Emitter Voltage (IB = 0)                      600                      V
     VEBO     Emitter-Base Voltage (IC = 0)                            7                       V
        IC    Collector Current                                        7                       A
      I CM    Collector Peak Current (tp < 5 ms)                       12                      A
        IB    Base Current                                             5                       A
      I BM    Base Peak Current (tp < 5 ms)                            8                       A
                                           o
      P tot   T otal Dissipation at Tc = 25 C            40                      50            W
                                                                                               o
     T s tg   Storage Temperature                             -65 to 150                           C
                                                                                               o
      Tj      Max. Operating Junction T emperature               150                               C


June 1997                                                                                              1/7
SGSIF344 / SGSIF444

THERMAL DATA
                                                                                                                    o
                                                                                   ISOW AT T220 ISOW AT T218            C/W
                                                                                                                    o
  R t hj-ca se   Thermal Resistance Junction-case                            Max       3.12             2.5             C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symb ol              Parameter                            Test Cond ition s            Min.   Typ .     Max.      Un it
      I CES      Collector Cut-off            V CE = 1200 V                                                   200       

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