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ST13003N
High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Application
3
2
Compact fluorescent lamps (CFLs) 1
Description SOT-32
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge Figure 1. Internal schematic diagram
termination to enhance switching speeds while
maintaining the wide RBSOA.
Table 1. Device summary
Order code Marking Package Packaging
ST13003N 13003N SOT-32 BAG
February 2010 Doc ID 15759 Rev 2 1/9
www.st.com 9
Electrical ratings ST13003N
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Collector-base voltage (IC = 0) 9 V
IC Collector current 1 A
ICM Collector peak current (tP < 5 ms) 2 A
IB Base current 0.5 A
IBM Base peak current (tP < 5 ms) 1 A
PTOT Total dissipation at Tc = 25 ◦ Jabse Service Manual Search 2026 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo