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                                                                                                     STU7NB90
                                                                                                     STU7NB90I
                           N-CHANNEL 900V - 1.1  - 7.3 A Max220/Max220I
                                                 PowerMeshTM MOSFET
         TYPE               VDSS         RDS(on)            ID

    STU7NB90               900 V        < 1.45          7.3 A
    STU7NB90I              900 V        < 1.45          7.3 A
s    TYPICAL RDS(on) = 1.1 
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
                                                                                               3
s    VERY LOW INTRINSIC CAPACITANCES                                                       2
                                                                                       1
s    GATE CHARGE MINIMIZED
s    REDUCED VOLTAGE SPREAD
                                                                            Max220                           Max220I
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout                     INTERNAL SCHEMATIC DIAGRAM
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest R DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

  EQUIPMENT

ABSOLUTE MAXIMUM RATINGS
     Symbol                                     Parameter                                          Value                 Unit
                                                                                 STU7NB90                  STU7NB90I
       VDS        Drain-source Voltage (VGS = 0)                                                   900                       V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                                  900                       V
       VGS        Gate- source Voltage                                                             

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