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                                                                                       STW12NB60
                                              N-CHANNEL 600V - 0.5 - 12A TO-247
                                                         PowerMeshTMII MOSFET

         TYPE           VDSS       RDS(on)           ID

    STW12NB60          600V        < 0.6         12 A
s    TYPICAL RDS(on) = 0.5
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    VERY LOW INTRINSIC CAPACITANCES                                                                    3
s    GATE CHARGE MINIMIZED                                                                          2
                                                                                                1

DESCRIPTION                                                                         TO-247
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout                INTERNAL SCHEMATIC DIAGRAM
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.



APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLIES AND MOTOR DRIVE




ABSOLUTE MAXIMUM RATINGS
     Symbol                              Parameter                                     Value                       Unit
       VDS      Drain-source Voltage (VGS = 0)                                          600                         V
      VDGR      Drain-gate Voltage (RGS = 20 k)                                         600                         V
       VGS      Gate- source Voltage                                                    

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