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STW26NM50
N-channel 500 V, 0.10 30 A TO-247
,
MDmeshTM Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STW26NM50 500 V < 0.12 30 A
High dv/dt and avalanche capabilities
Improved ESD capability 3
2
1
Low input capacitance and gate charge
TO-247
Application
Switching applications
Description
Figure 1. Internal schematic diagram
MDmeshTM technology applies the benefits of the
multiple drain process to STMicroelectronics'
well-known PowerMESHTM horizontal layout
structure. The resulting product offers low on-
resistance, high dv/dt capability and excellent
avalanche characteristics.
Table 1. Device summary
Order codes Marking Package Packaging
STW26NM50 W26NM50 TO-247 Tube
October 2009 Doc ID 8291 Rev 11 1/12
www.st.com 12
Contents STW26NM50
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 8291 Rev 11
STW26NM50 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 500 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2026 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo