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STW7NC80Z
N-CHANNEL 800V - 1.5 - 6A TO-247
Zener-Protected PowerMESHTMIII MOSFET
TYPE VDSS RDS(on) ID
STW7NC80Z 800 V < 1.8 6A
s TYPICAL RDS(on) = 1.5
s EXTREMELY HIGH dv/dt CAPABILITY
s GATE-TO-SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s)
TO-247
t(
DESCRIPTION
uc
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
d
ro
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
P
ed by a large variety of single-switch applications.
APPLICATIONS
le te
so
s SINGLE-ENDED SMPS IN MONITORS,
Ob
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
-
ABSOLUTE MAXIMUM RATINGS
ct (s)
du
Symbol Parameter Value Unit
ro
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 k)
P
800 V
VGS
e
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