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STW45NM50
N-channel 550 V @ TJmax, 0.08 , 45 A, TO-247
MDmeshTM Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STW45NM50FD 500 V < 0.1 45 A
100% avalanche tested
High dv/dt and avalanche capabilities 3
2
1
Low input capacitance and gate charge
TO-247
Low gate input resistance
Application
Switching applications
Figure 1. Internal schematic diagram
Description
The MDmeshTM is a new revolutionary Power
MOSFET technology that associates the Multiple
Drain process with the company's PowerMESHTM
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the company's proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competitor's products.
Table 1. Device summary
Order code Marking Package Packaging
STW45NM50 W45NM50 TO-247 Tube
July 2009 Doc ID 8477 Rev 5 1/12
www.st.com 12
Contents STW45NM50
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 8477 Rev 5
STW45NM50 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
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