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                                                                                              STW47NM50
                                                 N-CHANNEL 500V - 0.065 - 45A TO-247
                                                            MDmeshTMPower MOSFET
                                                                                                               ADVANCED DATA

     TYPE            VDSS        RDS(on)        Rds(on)*Qg    ID

 STW47NM50           500V       < 0.085          5.6 *nC     45 A
   TYPICAL RDS(on) = 0.065
   HIGH dv/dt AND AVALANCHE CAPABILITIES
   100% AVALANCHE TESTED
   LOW INPUT CAPACITANCE AND GATE
   CHARGE
                                                                                                               3
   LOW GATE INPUT RESISTANCE                                                                               2
                                                                                                       1
   TIGHT PROCESS CONTROL AND HIGH
   MANUFACTURING YIELDS                                                                      TO-247

DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low                     INTERNAL SCHEMATIC DIAGRAM
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.

APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.



ABSOLUTE MAXIMUM RATINGS
   Symbol                                       Parameter                                      Value                        Unit
      VDS         Drain-source Voltage (VGS = 0)                                                500                          V
     VDGR         Drain-gate Voltage (RGS = 20 k)                                               500                          V
      VGS         Gate- source Voltage                                                          

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