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                                                                                             STW9NC80Z
                                             N-CHANNEL 800V - 0.82 - 9.4A TO-247
                                            Zener-Protected PowerMESHTMIII MOSFET

        TYPE                VDSS         RDS(on)      ID

    STW9NC80Z              800 V          <0.9     9.4 A
n    TYPICAL RDS(on) = 0.82
n    EXTREMELY HIGH dv/dt CAPABILITY
n    GATE-TO-SOURCE ZENER DIODES
n    100% AVALANCHE TESTED
n    VERY LOW INTRINSIC CAPACITANCES
n    GATE CHARGE MINIMIZED
                                                                                            TO-247
DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.

APPLICATIONS
n SINGLE-ENDED SMPS IN MONITORS,
  COMPUTER AND INDUSTRIAL APPLICATION
n WELDING EQUIPMENT


ABSOLUTE MAXIMUM RATINGS
      Symbol                                       Parameter                                         Value               Unit
       VDS           Drain-source Voltage (VGS = 0)                                                   800                 V
       VDGR          Drain-gate Voltage (RGS = 20 k)                                                  800                 V
       VGS           Gate- source Voltage                                                             

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