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                                                                                                              STB7NB40
                                                 N - CHANNEL ENHANCEMENT MODE
                                                            PowerMESHTM MOSFET
                                                                                                                   PRELIMINARY DATA
         TYPE             V DSS         R DS(on)          ID
STB7NB40                 400 V         < 0.9           7.0 A

s    TYPICAL RDS(on) = 0.75 
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    VERY LOW INTRINSIC CAPACITANCES                                                                                3
                                                                                                               1
s    GATE CHARGE MINIMIZED
s    FOR THROUGH-HOLE VERSION CONTACT
     SALES OFFICE                                                                                     D2PAK
                                                                                                      TO-263
DESCRIPTION                                                                                         (Suffix "T4")
Using the latest high voltage technology, SGS-Thomson
has designed an advanced family of power Mosfets with
outstanding performances. The new patent pending strip
layout coupled with the Company's proprietary edge
termination structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
                                                                                 INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS
    Symbol                                 Parameter                                                   Value                       Uni t
                                                                                                    STB7NB40
      V DS       Drain-source Voltage (V GS = 0)                                                         400                         V
     V DGR       Drain- gate Voltage (R GS = 20 k)                                                       400                         V
      V GS       Gate-source Voltage                                                                    

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