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                                                                                    STB40NE03L-20
                               N - CHANNEL ENHANCEMENT MODE
                       " SINGLE FEATURE SIZETM " POWER MOSFET
            TYPE           V DSS        R DS(on)       ID



s    TYPICAL RDS(on) = 0.014 
s    EXCEPTIONAL dv/dt CAPABILITY
s    LOW GATE CHARGE A 100 oC
s    APPLICATION ORIENTED
     CHARACTERIZATION                                                                                   3
s    FOR THROUGH-HOLE VERSION CONTACT                                                               1
     SALES OFFICE
                                                                                            D2PAK
DESCRIPTION                                                                                 TO-263
This Power MOSFET is the latest development of                                            (suffix "T4")
SGS-THOMSON unique "Single Feature SizeTM "
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-                      INTERNAL SCHEMATIC DIAGRAM
able manufacturing reproducibility.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
  SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS IN HIGH
  PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT (INJECTION,
  ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
    Symbol                             Parameter                                           Value                           Unit
      V DS       Drain-source Voltage (VGS = 0)                                              30                             V
     V DGR       Drain- gate Voltage (RGS = 20 k)                                            30                             V
      V GS       Gate-source Voltage                                                       

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