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STB40NS15
N-channel 150V - 0.045 - 40A - D2PAK
MESH OVERLAYTM Power MOSFET
Features
RDS(on)
Type VDSS ID
(max)
STB40NS15 150V <0.052 40A
Exceptional dv/dt capability
Gate charge minimized 3
1
Very low intrinsic capacitances
D2PAK
Applications
Switching application
Description
Figure 1. Internal schematic diagram
This Power MOSFET is designed using the
company's consolidated strip layout-based MESH
OVERLAYTM process. This technology matches
and improves the performances compared with
standard parts from various sources.
Table 1. Device summary
Part number Marking Package Packaging
STB40NS15T4 B40NF15 D2PAK Tape & reel
October 2007 Rev 4 1/13
www.st.com 13
Contents STB40NS15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STB40NS15 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 150 V
VDGR Drain-gate voltage (RGS = 20 k) 150 V
VGS Gate- source voltage ◦ Jabse Service Manual Search 2026 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo