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                                                                                                     STB50NE08
                               N - CHANNEL ENHANCEMENT MODE
                       " SINGLE FEATURE SIZETM " POWER MOSFET
            TYPE          V DSS        R DS(on)        ID
ST B50NE08                80 V       <0.024           50 A
s    TYPICAL RDS(on) = 0.020 
s    EXCEPTIONAL dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    LOW GATE CHARGE AT 100 oC
s    APPLICATION ORIENTED
     CHARACTERIZATION                                                                                         3
                                                                                                          1
s    FOR THROUGH-HOLE VERSION CONTACT
     SALES OFFICE
                                                                                                D2PAK
DESCRIPTION                                                                                     TO-263
This Power MOSFET is the latest development of                                                (suffix "T4")
SGS-THOMSON unique "Single Feature SizeTM "
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a                               INTERNAL SCHEMATIC DIAGRAM
remarkable manufacturing reproducibility.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
  ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS
    Symbol                                 Parameter                                               Value                         Uni t
      V DS     Drain-source Voltage (V GS = 0)                                                       80                            V
     V DGR     Drain- gate Voltage (R GS = 20 k)                                                     80                            V
      V GS     Gate-source Voltage                                                                  

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