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                                                                          STB60N03L-10
                                                 N - CHANNEL ENHANCEMENT MODE
                                                         POWER MOS TRANSISTOR
                                                                                       PRELIMIRARY DATA
        TYPE              V DSS         R DS(on)        ID
STB60N03L-10              30 V        < 0.01           60 A

s   TYPICAL RDS(on) = 0.0085 
s   AVALANCHE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED
s   REPETITIVE AVALANCHE DATA AT 100oC
s   LOW GATE CHARGE
s   HIGH CURRENT CAPABILITY
                                                                                 3                3
s   175 oC OPERATING TEMPERATURE                                              12              1
s   APPLICATION ORIENTED
    CHARACTERIZATION
                                                                     I2PAK               D2PAK
s   THROUGH-HOLE I2PAK (TO-262) POWER
                                                                     TO-262              TO-263
    PACKAGE IN TUBE (SUFFIX "-1")
s   SURFACE-MOUNTING D2PACK (TO-263)
    POWER PACKAGE IN TUBE (NO SUFFIX)
    OR IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS                                                      INTERNAL SCHEMATIC DIAGRAM
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS

s REGULATORS

s DC-DC & DC-AC CONVERTERS

s AUTOMOTIVE ENVIRONMENT (INJECTION,

  ABS, AIR-BAG, LAMPDRIVERS, Etc.)




ABSOLUTE MAXIMUM RATINGS

    Symbol                             Parameter                               Value                  Unit
     V DS      Drain-source Voltage (V GS = 0)                                   30                    V
     VDGR      Drain- gate Voltage (R GS = 20 k)                                 30                    V
     V GS      Gate-source Voltage                                              

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