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                                                                                             STB60NE03L-10
                               N - CHANNEL ENHANCEMENT MODE
                       " SINGLE FEATURE SIZETM " POWER MOSFET
           T YPE            V DSS         R DS(o n)        ID
ST B60NE03L-10              30 V        < 0.010           60 A
s   TYPICAL RDS(on) = 0.007 
s   EXCEPTIONAL dv/dt CAPABILITY
s   100% AVALANCHE TESTED
s   LOW GATE CHARGE 100 oC
s   APPLICATION ORIENTED
    CHARACTERIZATION                                                                                               3
                                                                                                               1
s   FOR THROUGH-HOLE VERSION CONTACT
    SALES OFFICE
                                                                                                    D2PAK
DESCRIPTION                                                                                         TO-263
This Power Mosfet is the latest development of                                                    (suffix "T4")
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-                               INTERNAL SCHEMATIC DIAGRAM
able manufacturing reproducibility.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
  ABS, AIR-BAG, LAMPDRIVERS, Etc. )

ABSOLUTE MAXIMUM RATINGS
    Symbol                                 Parameter                                                   Value                         Uni t
     V DS      Drain-source Voltage (V GS = 0)                                                           30                           V
     V DGR     Drain- gate Voltage (R GS = 20 k)                                                         30                           V
     V GS      Gate-source Voltage                                                                      

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