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STB80N20M5
STP80N20M5
N-channel 200 V, 0.019 , 61 A, TO-220, D2PAK
MDmeshTM V Power MOSFET
Features
VDSS @ RDS(on)
Type ID
TJmax max
STB80N20M5 61 A
200 V < 0.023
STP80N20M5 61 A
3
3 2
1
Amongst the best RDS(on) * area 1
High dv/dt capability TO-220
D2PAK
Excellent switching performance
Easy to drive
100% avalanche tested
Application
Figure 1. Internal schematic diagram
Switching applications
Description
The devices are N-channel MDmeshTM V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics' well-known
PowerMESHTM horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes Marking Package Packaging
STB80N20M5 80N20M5 D2PAK Tape and reel
STP80N20M5 80N20M5 TO-220 Tube
July 2010 Doc ID 15734 Rev 2 1/14
www.st.com 14
Contents STB80N20M5, STP80N20M5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 Doc ID 15734 Rev 2
STB80N20M5, STP80N20M5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
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