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                                                                                        STBV32

                              High voltage fast-switching NPN power transistor


Features
   High voltage capability
   Low spread of dynamic parameters
   Minimum lot-to-lot spread for reliable operation
   Very high switching speed

Applications
   Compact fluorescent lamps (CFLS)
   SMPS for battery charger                                        TO-92               TO-92AP

Description
                                                           Figure 1.   Internal schematic diagram
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STBV32G and STBV32G-AP are supplied
using halogen-free molding compound.




Table 1.      Device summary
       Order codes                   Marking                     Package               Packaging

            STBV32                    BV32                        TO-92                   Bulk
           STBV32G                   BV32G                        TO-92                   Bulk
       STBV32-AP                      BV32                       TO-92AP               Ammopack
       STBV32G-AP                    BV32G                       TO-92AP               Ammopack




July 2008                                              Rev 8                                          1/11
                                                                                                 www.st.com   11
Electrical ratings                                                                              STBV32


1           Electrical ratings

            Table 2.      Absolute maximum rating
              Symbol                             Parameter                           Value       Unit
               VCES       Collector-emitter voltage (VBE = 0)                         700         V
               VCEO       Collector-emitter voltage (IB = 0)                          400         V
               VEBO       Collector-base voltage (IC = 0, IB = 0.5A, tP < 10 ms)   V(BR)EBO       V
                          Collector current
                 IC                                                                   1.5         A
                          (f  100 Hz, duty-cycle  50%, TC = 25 

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