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                                                                                STD3NM50
                                                                               STD3NM50-1
                        N-CHANNEL 550V @ Tjmax- 2.5 - 3A DPAK/IPAK
                                  Zener-Protected MDmeshTM MOSFET

         TYPE              VDSS         RDS(on)       ID
                         (@Tjmax)
 STD3NM50                   550V         <3           3A
 STD3NM50-1                 550V         <3           3A
s   TYPICAL RDS(on) = 2.5                                                  3                             3
    HIGH dv/dt AND AVALANCHE CAPABILITIES                                                            2
s
                                                                       1                         1
s   IMPROVED ESD CAPABILITY
s   LOW INPUT CAPACITANCE AND GATE


                                                                                                 s)
    CHARGE                                                         DPAK                  IPAK
    LOW GATE INPUT RESISTANCE                                     TO-252

                                                                                              t(
s                                                                                       TO-251
    TIGHT PROCESS CONTROL AND HIGH

                                                                                         uc
s

    MANUFACTORING YIELDS

                                                                                       d
                                                                             ro
DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-                         P
                                                                INTERNAL SCHEMATIC DIAGRAM
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
                                                                  le te
                                                                so
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the


                                                             Ob
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition's products.
                                                           -
                                                (s)
APPLICATIONS


                                             ct
The MDmeshTM family is very suitable for increase
the power density of high voltage converters allow-

                                   du
ing system miniaturization and higher efficiencies.

                                 o
                      Pr
ABSOLUTE MAXIMUM RATINGS
                    e
              let
    Symbol                               Parameter                             Value                         Unit
      VGS        Gate- source Voltage                                          

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