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STE180NE10
N-channel 100V - 4.5m - 180A - ISOTOP
STripFETTM Power MOSFET
General features
Type VDSS RDS(on) ID
STE180NE10 100V <6m 180A
100% avalanche tested
Low intrinsic capacitance
Gate charge minimized
Reduced voltage spread
ISOTOP
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Description
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This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
SizeTM" strip-based process. The resulting
P
transistor shows extremely high packing density
for low on-resistance, rugged avalanche te
Internal schematic diagram
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characteristics and less critical alignment steps
therefore a remarkable manufacturing
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reproducibility.
Applications -
Switching application
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Order codes
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O Part number
STE180NE10
Marking
E180NE10
Package
ISOTOP
Packaging
Tube
February 2007 Rev 6 1/12
www.st.com 12
Contents STE180NE10
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STE180NE10 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 100 V
VDGR Drain-gate voltage (RGS = 20k) 100 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2026 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo