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                                                                 STGB10NB37LZ
                                      N-CHANNEL CLAMPED 20A - D2PAK
                                 INTERNALLY CLAMPED PowerMeshTM IGBT

        TYPE           VCES        VCE(sat)          IC

    STGB10NB37LZ    CLAMPED        < 1.8 V        20 A
s    POLYSILICON GATE VOLTAGE DRIVEN
s    LOW THRESHOLD VOLTAGE
s    LOW ON-VOLTAGE DROP
s    LOW GATE CHARGE
                                                                                   3
s    HIGH CURRENT CAPABILITY
                                                                               1
s    HIGH VOLTAGE CLAMPING FEATURE

                                                                      D2PAK
DESCRIPTION

Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has                INTERNAL SCHEMATIC DIAGRAM
designed an advanced family of IGBTs, the
PowerMESH TM IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.



APPLICATIONS
s AUTOMOTIVE IGNITION




ABSOLUTE MAXIMUM RATINGS
     Symbol                           Parameter                        Value           Unit
      VCES     Collector-Emitter Voltage (VGS = 0)                   CLAMPED              V
      VECR     Reverse Battery Protection                               18                V
       VGE     Gate-Emitter Voltage                                  CLAMPED              V
       IC      Collector Current (continuos) at TC = 100

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