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                                                                          STGB7NB40LZ
                                       N-CHANNEL CLAMPED 14A - D2PAK
                                 INTERNALLY CLAMPED PowerMESHTM IGBT

       TYPE            VCES        VCE(sat)          IC

 STGB7NB40LZ         CLAMPED       < 1.50 V       14 A
 s   POLYSILICON GATE VOLTAGE DRIVEN
 s   LOW THRESHOLD VOLTAGE
 s   LOW ON-VOLTAGE DROP                                                                  3
                                                                                      1
 s   LOW GATE CHARGE
 s   HIGH CURRENT CAPABILITY
 s   HIGH VOLTAGE CLAMPING FEATURE                                            D2PAK



                                                                                                 t( s)
                                                                                            uc
 DESCRIPTION

 Using the latest high voltage technology based on a
                                                                                          d
 patented strip layout, STMicroelectronics has
 designed an advanced family of IGBTs, the
 PowerMESHTM IGBTs, with outstanding
                                                                               ro
                                                                    INTERNAL SCHEMATIC DIAGRAM

                                                                             P
 performances. The built in collector-gate zener
 exhibits a very precise active clamping while the
                                                                     le te
                                                               so
 gate-emitter zener supplies an ESD protection.



 APPLICATIONS
                                                          - Ob
                                           (s)
 s AUTOMOTIVE IGNITION




                                        ct
                                du
 ABSOLUTE MAXIMUM RATINGS
     Symbol
                              o       Parameter                                Value                Unit
      VCES
      VECR
                  e Pr
               Collector-Emitter Voltage (VGS = 0)
               Reverse Battery Protection
                                                                             CLAMPED
                                                                                20
                                                                                                     V
                                                                                                     V


              let
      VGE      Gate-Emitter Voltage                                          CLAMPED                 V
       IC
            o  Collector Current (continuous) at 100

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