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                                                                        STGP12NB60HD
                                                              N-CHANNEL 12A - 600V TO-220
                                                                      PowerMESHTM IGBT

        TYPE               VCES         VCE(sat)         IC

 STGP12NB60HD              600 V         < 2.8 V     12 A
s   HIGH INPUT IMPEDANCE
s   LOW ON-VOLTAGE DROP (Vcesat)
s   OFF LOSSES INCLUDE TAIL CURRENT                                                       2
                                                                                              3
                                                                                      1
s   LOW GATE CHARGE                                                          TO-220
s   HIGH CURRENT CAPABILITY
s   VERY HIGH FREQUENCY OPERATION
s   CO-PACKAGED WITH TURBOSWITCHT
s   ANTIPARALLEL DIODE

DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-                   INTERNAL SCHEMATIC DIAGRAM
signed an advanced family of IGBTs, the Power-
MESHTM IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.

APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s SMPS and PFC IN BOTH HARD SWITCH AND
  RESONANT TOPOLOGIES
s UPS



ABSOLUTE MAXIMUM RATINGS
    Symbol                                   Parameter                        Value               Unit
     VCES         Collector-Emitter Voltage (VGS = 0)                          600                 V
     VECR         Emitter-Collector Voltage                                    20                  V
      VGE         Gate-Emitter Voltage                                        

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