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STL7NM60N
N-channel 600 V, 0.805 5.8 A PowerFLATTM (5x5)
,
MDmeshTM II Power MOSFET
Features
VDSS @ RDS(on)
Order code ID
TJMAX max.
STL7NM60N 650 V < 0.90 5.8 A(1)
1. The value is rated according Rthj-case
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance PowerFLAT (5x5)
Application
Switching applications
Description Figure 1. Internal schematic diagram
These devices are made using the second D D D
generation of MDmeshTM technology. This
14 13 12 11 G
revolutionary Power MOSFET associates a new Pin 1
vertical structure to the company's strip layout to
(not connected)
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most S 2 10 S
Drain
demanding high efficiency converters.
S 3 9 S
S 4 8 S
5 6 7
D D D
Table 1. Device summary
Order code Marking Package Packaging
STL7NM60N 7NM60N PowerFLATTM (5x5) Tape and reel
January 2011 Doc ID 18348 Rev 1 1/12
www.st.com 12
Contents STL7NM60N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 18348 Rev 1
STL7NM60N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 600 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2026 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo