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                                                           STP20NM60 - STP20NM60FP
                                                            STB20NM60 STB20NM60-1
            N-CHANNEL 600V - 0.25 - 20A TO-220/FP/D2PAK/I2PAK
                                      MDmeshTMPower MOSFET

        TYPE                 VDSS               RDS(on)      ID

 STP20NM60                   600   V        <    0.29       20   A
 STP20NM60FP                 600   V        <    0.29       20   A
 STB20NM60                   600   V        <    0.29       20   A                          3                                               3
 STB20NM60-1                 600   V        <    0.29       20   A                  1
                                                                                        2                                           1
                                                                                                                                        2


s   TYPICAL RDS(on) = 0.25                                                 TO-220                                         TO-220FP
s   HIGH dv/dt AND AVALANCHE CAPABILITIES
s   100% AVALANCHE TESTED
s   LOW INPUT CAPACITANCE AND GATE CHARGE
s   LOW GATE INPUT RESISTANCE                                                           3
                                                                                                                                         3
                                                                                                                                1
                                                                                     12
DESCRIPTION                                                                 I2PAK                                           D2PAK
The MDmeshTM is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company's PowerMESHTM horizontal layout. The                                 INTERNAL SCHEMATIC DIAGRAM
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company's propri-
etary strip technique yields overall dynamic perfor-
mance that is significantly better than that of similar
competition's products.

APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS
    Symbol                                      Parameter                                              Value                            Unit
                                                                               STP(B)20NM60(-1)                STP20NM60FP
      VDS         Drain-source Voltage (VGS = 0)                                                        600                                 V
     VDGR         Drain-gate Voltage (RGS = 20 k)                                                       600                                 V
      VGS         Gate- source Voltage                                                                  

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