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                                                                                                      STP4NB50
                                                                                                    STP4NB50FP
                        N-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FP
                                                PowerMeshTM MOSFET
                                                                                                                PRELIMINARY DATA

         TYPE                VDSS         RDS(on)            ID

  STP4NB50                  500 V         < 2.8          3.8 A
  STP4NB50FP                500 V         < 2.8          2.5 A
 s   TYPICAL RDS(on) = 2.5 
 s   EXTREMELY HIGH dv/dt CAPABILITY
 s   100% AVALANCHE TESTED                                                                          3                              3
                                                                                                2                              2
 s   VERY LOW INTRINSIC CAPACITANCES                                                        1                              1
 s   GATE CHARGE MINIMIZED


                                                                                                                           s)
                                                                              TO-220                              TO-220FP
 DESCRIPTION
 Using the latest high voltage MESH OVERLAYTM
                                                                                                                        t(
                                                                                                                  uc
 process, STMicroelectronics has designed an ad-
 vanced family of power MOSFETs with outstanding
                                                                                                                d
                                                                                                  ro
 performances. The new patent pending strip layout
 coupled with the Company's proprieraty edge termi-                         INTERNAL SCHEMATIC DIAGRAM
 nation structure, gives the lowest RDS(on) per area,
                                                                                                P
                                                                                   te
 exceptional avalanche and dv/dt capabilities and
 unrivalled gate charge and switching characteris-
 tics.
                                                                                le
 APPLICATIONS
                                                                       so
                                                                    Ob
 s HIGH CURRENT, HIGH SPEED SWITCHING
 s SWITH MODE POWER SUPPLIES (SMPS)

 s DC-AC CONVERTERS FOR WELDING
                                                                  -
                                                      (s)
   EQUIPMENT AND UNINTERRUPTIBLE


                                                   ct
   POWER SUPPLIES AND MOTOR DRIVE


                                       du
 ABSOLUTE MAXIMUM RATINGS
     Symbol
                                     o           Parameter                                          Value                      Unit


       VDS
                       e Pr
                   Drain-source Voltage (VGS = 0)
                                                                                  STP4NB50
                                                                                                        500
                                                                                                              STP4NB50FP
                                                                                                                                V


               let
      VDGR         Drain-gate Voltage (RGS = 20 k)                                                      500                     V
       VGS
             o     Gate- source Voltage                                                                 

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