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                                                                               STP60N05-14
                                                                               STP60N06-14
                                                N - CHANNEL ENHANCEMENT MODE
                                                        POWER MOS TRANSISTOR
                                                                                         PRELIMINARY DATA
       TYPE              V DSS         R DS(on)        ID
STP60N05-14              50 V        < 0.014          60 A
STP60N06-14              60 V        < 0.014          60 A


s   TYPICAL RDS(on) = 0.012 
s   AVALANCHE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED
s   REPETITIVE AVALANCHE DATA AT 100oC
s   LOW GATE CHARGE                                                                               3
                                                                                             2
s   HIGH CURRENT CAPABILITY                                                              1
s   175 oC OPERATING TEMPERATURE
s   VERY LOW RDS (on)                                                           TO-220
s   APPLICATION ORIENTED
    CHARACTERIZATION

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS

s REGULATORS
                                                                 INTERNAL SCHEMATIC DIAGRAM
s DC-DC & DC-AC CONVERTERS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s AUTOMOTIVE ENVIRONMENT (INJECTION,

  ABS, AIR-BAG, LAMPDRIVERS, Etc.)




ABSOLUTE MAXIMUM RATINGS
    Symbol                             Parameter                            Value                     Unit
                                                                 STP60N05-14          STP60N06-14
     V DS      Drain-Source Voltage (V gs = 0)                       50                      60         V
     VDGR      Drain-Gate Voltage (R gs = 20 K)                      50                      60         V
     V GS      Gate-Source Voltage                                             

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