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stp6n25-


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                                                                                           STP6N25
                                                                                          STP6N25FI
                                                 N - CHANNEL ENHANCEMENT MODE
                                                        POWER MOS TRANSISTORS
                                                                                            PRELIMINARY DATA

        TYPE              V DSS         R DS( on)   ID
STP6N25                  250 V          < 1         6A
STP6N25FI                250 V          < 1         4A

s   TYPICAL RDS(on) = 0.7 
s   AVALANCHE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED
s   REPETITIVE AVALANCHE DATA AT 100oC                                             3                          3
s   APPLICATION ORIENTED                                                   1
                                                                               2
                                                                                                      1
                                                                                                          2
    CHARACTERIZATION

APPLICATIONS                                                      TO-220                   ISOWATT220
s HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s MOTOR CONTROL, AUDIO AMPLIFIERS
s INDUSTRIAL ACTUATORS
s DC-DC & DC-AC CONVERTERS FOR
  TELECOM, INDUSTRIAL AND CONSUMER                               INTERNAL SCHEMATIC DIAGRAM
  ENVIRONMENT
s PARTICULARLY SUITABLE FOR
  ELECTRONIC FLUORESCENT LAMP
  BALLASTS




ABSOLUTE MAXIMUM RATINGS

    Symbol                             Parameter                               Value                      Unit
                                                                   STP6N25                STP6N25FI
     VD S      Drain-source Voltage (V GS = 0)                                     250                        V
     V DG R    Drain- gate Voltage (R GS = 20 k)                                   250                        V
     V GS      Gate-source Voltage                                                 



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