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                                                                              STP80N06-10
                        N - CHANNEL ENHANCEMENT MODE
            "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
                                                                                        PRELIMINARY DATA
         TYPE             V DSS         R DS(on)     ID
STP80N06-10               60 V        < 0.010       80 A

s    TYPICAL RDS(on) = 8.5 m
s    AVALANCHE RUGGED TECHNOLOGY
s    100% AVALANCE TESTED
s    HIGH CURRENT CAPABILITY
s    175 oC OPERATING TEMPERATURE
s    HIGH dV/dt RUGGEDNESS                                                                      3
s    APPLICATION ORIENTED                                                                   2
                                                                                        1
     CHARACTERIZATION

APPLICATIONS                                                                   TO-220
s HIGH CURRENT, HIGH SPEED SWITCHING

s PWM MOTOR CONTROL

s DC-DC & DC-AC CONVERTER

s SYNCROUNOUS RECTIFICATION




                                                                   INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                             Parameter                             Value                  Unit
      V DS      Drain-source Voltage (V GS = 0)                               60                      V
     VDGR       Drain- gate Voltage (R GS = 20 k)                             60                      V
      V GS      Gate-source Voltage                                          

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