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                                                                                           STP80NE06-10
                               N - CHANNEL ENHANCEMENT MODE
                       " SINGLE FEATURE SIZETM " POWER MOSFET
           TYPE           V DSS        R DS(on)        ID
STP80NE06-10              60 V        <0.01        80 A
s   TYPICAL RDS(on) = 0.0085 
s   EXCEPTIONAL dv/dt CAPABILITY
s   100% AVALANCHE TESTED
s   APPLICATION ORIENTED
    CHARACTERIZATION

DESCRIPTION                                                                                                         3
                                                                                                                2
This Power MOSFET is the latest development of                                                              1
SGS-THOMSON unique "Single Feature SizeTM "
strip-based process. The resulting transistor                                                   TO-220
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility.

APPLICATIONS                                                               INTERNAL SCHEMATIC DIAGRAM
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-DC CONVERTERS

s AUTOMOTIVE ENVIRONMENT




ABSOLUTE MAXIMUM RATINGS

    Symbol                                 Parameter                                              Value                        Unit
     V DS     Drain-source Voltage (V GS = 0)                                                       60                           V
     V DGR    Drain- gate Voltage (R GS = 20 k)                                                     60                           V
     V GS     Gate-source Voltage                                                                  

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