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                                                                                             STP80NE03L-06
                               N - CHANNEL ENHANCEMENT MODE
                       " SINGLE FEATURE SIZETM " POWER MOSFET
                                                                                                                 PRELIMINARY DATA
           T YPE            V DSS         R DS(o n)        ID
ST P80NE03L-06              30 V        < 0.006           80 A
s   TYPICAL RDS(on) = 0.005 
s   EXCEPTIONAL dv/dt CAPABILITY
s   100% AVALANCHE TESTED
s   LOW GATE CHARGE 100 oC
s   APPLICATION ORIENTED
    CHARACTERIZATION
                                                                                                                         3
                                                                                                                     2
DESCRIPTION                                                                                                      1
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"                                                              TO-220
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
                                                                                INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
  ABS, AIR-BAG, LAMPDRIVERS, Etc. )



ABSOLUTE MAXIMUM RATINGS
    Symbol                                 Parameter                                                   Value                         Uni t
     V DS      Drain-source Voltage (V GS = 0)                                                           30                           V
     V DGR     Drain- gate Voltage (R GS = 20 k)                                                         30                           V
     V GS      Gate-source Voltage                                                                      

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