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                                                                                           STS7C4F30L
                                                                    N-CHANNEL 30V - 0.018  - 7A SO-8
                                                                    P-CHANNEL 30V - 0.070  - 4A SO-8
                                                                         STripFETTM POWER MOSFET

               TYPE                VDSS       RDS(on)   ID

    STS7C4F30L(N-Channel)          30 V      <0.022     7A
    STS7C4F30L(P-Channel)          30 V      <0.080     4A
s    TYPICAL RDS(on) (N-Channel) = 0.018 
s    TYPICAL RDS(on) (P-Channel) = 0.070 
s    STANDARD OUTLINE FOR EASY
     AUTOMATED SURFACE MOUNT ASSEMBLY
s    LOW THRESHOLD DRIVE

DESCRIPTION                                                                                   SO-8
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-               INTERNAL SCHEMATIC DIAGRAM
able manufacturing reproducibility.

APPLICATIONS
s DC/DC CONVERTERS

s BATTERY MANAGEMENT IN NOMADIC

  EQUIPMENT
s POWER MANAGEMENT IN CELLULAR

  PHONES




ABSOLUTE MAXIMUM RATINGS
     Symbol                               Parameter                    N-CHANNEL               P-CHANNEL            Unit
      VDS         Drain-source Voltage (VGS = 0)                             30                      30               V
       VDGR       Drain-gate Voltage (RGS = 20 k)                            30                      30               V
       VGS        Gate- source Voltage                                      

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