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                                                                               STS5N15F4
                                           N-channel 150 V, 0.057 5 A, SO-8
                                                                 ,
                                     STripFETTM DeepGATETM Power MOSFET

Features
                                RDS(on)
      Type           VDSS                    ID
                                 max
   STS5N15F4         150 V     < 0.063      5A

   N-channel enhancement mode
   100% avalanched rated                                                    SO-8
   Low gate charge
   Very low on-resistance

Application
                                                       Figure 1.    Internal schematic diagram
   Switching applications

Description
This STripFETTM DeepGATETM Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performances.




Table 1.      Device summary
       Order code                 Marking                    Package                Packaging

       STS5N15F4                   5U15-                         SO-8              Tape and reel




August 2009                                 Doc ID 16083 Rev 2                                     1/11
                                                                                              www.st.com   11
Electrical ratings                                                                            STS5N15F4


1           Electrical ratings

            Table 2.           Absolute maximum ratings
              Symbol                             Parameter                         Value          Unit

                 VDS           Drain-source voltage (VGS = 0)                       150            V
                 VGS           Gate-source voltage                                 

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