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                                                                                               STS6PF30L
                                                    P-CHANNEL 30V - 0.027  - 6A SO-8
                                                         STripFETTM POWER MOSFET

        TYPE             VDSS        RDS(on)        ID

    STS6PF30L            30 V       <0.030          6A
s    TYPICAL RDS(on) = 0.027 
s    STANDARD OUTLINE FOR EASY
     AUTOMATED SURFACE MOUNT ASSEMBLY
s    LOW THRESHOLD DRIVE

DESCRIPTION


                                                                                                                     s)
This Power MOSFET is the latest development of

                                                                                                                  t(
STMicroelectronis unique "Single Feature SizeTM"                                           SO-8


                                                                                                       uc
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
                                                                                                     d
                                                                                           ro
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
                                                            INTERNAL SCHEMATIC DIAGRAM   P
                                                                             te
APPLICATIONS
s MOBILE PHONE APPLICATIONS


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                                                              so
s DC-DC CONVERTERS

s BATTERY MANAGEMENT IN NOMADIC




                                                           Ob
  EQUIPMENT


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                                                            Information furnished is believed to be accurate and reliable. However, STMicroel
ABSOLUTE MAXIMUM RATINGS                                    of use of such information nor for any infringement of patents or other rights of third

O    Symbol
       VDS
                                 Parameter
                 Drain-source Voltage (VGS = 0)
                                                            by implication or otherwise under any patent or patent rights of STMicroelectronic
                                                                                 Value                                 Unit
                                                            to change without notice. This publication supersedes and replaces all information
                                                                                   30 components in life support devices or systems withou
                                                            authorized for use as critical                              V
      VDGR       Drain-gate Voltage (RGS = 20 k)                                   30                                    V
       VGS       Gate- source Voltage                                             

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