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STS8DN3LLH5
Dual N-channel 30 V, 0.0155 , 10 A, SO-8
STripFETTM V Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STS8DN3LLH5 30 V < 0.019 10 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on) SO-8
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications Figure 1. Internal schematic diagram
Description
This STripFETTMV Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
Table 1. Device summary
Order code Marking Package Packaging
STS8DN3LLH5 8DN3LL SO-8 Tape and reel
January 2010 Doc ID 16967 Rev 1 1/12
www.st.com 12
Contents STS8DN3LLH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 16967 Rev 1
STS8DN3LLH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2026 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo