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STS9NH3LL
N-channel 30 V - 0.018 - 9 A - SO-8
low gate charge STripFETTM III Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STS9NH3LL 30 V 0.022 9A
Optimal RDS(on) x Qg trade-off @ 4.5 V
Conduction losses reduced
SO-8
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Switching losses reduced
Application t(
Switching applications
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Description
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This application specific Power MOSFET is the
third generation of STMicroelectronics unique
Figure 1.
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Internal schematic diagram
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"single feature size" strip-based process. The
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resulting transistor shows the best trade-off
between on-resistance and gate charge. When
used as high and low side in buck regulators, it
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gives the best performance in terms of both
conduction and switching losses. This is
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extremely important for motherboards where fast
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switching and high efficiency are of paramount
importance.
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Table 1. Device summary
Order code Marking Package Packaging
O STS9NH3LL S9NH3LL SO-8 Tape & reel
December 2007 Rev 3 1/13
www.st.com 13
Contents STS9NH3LL
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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2/13
STS9NH3LL Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2026 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo