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TIP47/48/49/50                                                                 NPN SILICON TRANSISTOR


HIGH VOLTAGE AND SWITCHING
APPLICATIONS                                                                            TO-220
HIGH SUSTAINING VOLTAGE
(VCEO(sus): 250 to 400V)
1A RATED COLLECTOR CURRENT

ABSOLUTE MAXIMUM RATINGS
              Characteristic                 Symbol        Rating        Unit
 Collector Emitter Voltage :TIP47             VCBO          350            V
                                :TIP48                      400            V
                                :TIP49                      450            V
                                :TIP50                      500            V
 Collector Emitter Voltage : TIP47            VCEO          250            V              1.Base 2.Collector 3.Emitter
                                :TIP48                      300            V
                                :TIP49                      350            V
                                :TIP50                      400            V
 Emitter-Base Voltage                         VEBO             5           V
 Collector Current (DC)                       IC               1           A
 Collector Current (Pulse)                    IC               2           A
 Base Current                                 IB            0.6            A
                              &)
 Collector Dissipation ( T C=25               PC               40         W
 Collector Dissipation ( T =25&)              PC               2          W
                                                                          &
                            A

 Junction Temperature                         TJ            150
 Storage Temperature                          T STG       -65 ~ 150       &
ELECTRICAL CHARACTERISTICS (T C =25&)
               Characteristic                       Symbol                 Test Conditions           Min     Max     Unit
 Collector Emitter Sustaining Voltage              VCEX(sus)
                                                                    IC = 30mA, IB = 0                250              V
                                : TIP47                                                              300              V
                                : TIP48                                                              350              V
                                : TIP49                                                              400              V
 Collector Cutoff Current       : TIP50            ICEO             VCE = 150V, IB = 0                         1     mA
                                : TIP47                             VCE = 200V, IB = 0                         1     mA
                                : TIP48                             VCE = 250V, IB = 0                         1     mA
                                : TIP49                             VCE = 300V, IB = 0                         1     mA
 Collector Cutoff Current       : TIP50            ICEX             VCE = 350V, VBE = 0                        1     mA
                                : TIP47                             VCE = 400V, VBE = 0                        1     mA
                                : TIP48                             VCE = 450V, VBE = 0                        1     mA
                                : TIP49                             VCE = 500V, VBE = 0                        1     mA
 Emitter Cutoff Current         : TIP50            IEBO             VEB = 5V, IC = 0                           1     mA
*DC Current Gain                                   hFE              VCE = 10V, IC = 0.3A              30     150
                                                                    VCE = 10V, IC = 1A                10
 *Collector Emitter Saturation Voltage           VCE(sat)           IC = 1A, IB = 0.2A                         1      V
 *Base Emitter Saturation Voltage                VBE(on)            VCE = 10V, IC = 1A                       1.5      V
  Current Gain Bandwidth Product                 fT                 VCE =10V, IC = 0.2A, f = 1KHz     10             MHz
  Turn On Time                                   tON                VCC = 400V                               0.5      uS
  Storage Time                                   tSTG               5IB1 = -2.5IB2 = IC = 6A                   3      uS
  Fall Time                                      tF                 RL = 66.7   

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