Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors Samsung but11

<< Back | Home

Most service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.



Image preview - the first page of the document



>> Download but11 documenatation <<

Text preview - extract from the document

BUT11/11A                                                              NPN SILICON TRANSISTOR


HIGH VOLTAGE POWER SWITCH
                                                                                       TO-220
SWITCHING APPLICATIONS


ABSOLUTE MAXIMUM RATINGS

             Characteristic                Symbol        Rating   Unit
 Collector Base Voltage                    VCES            850     V
                              : BUT11                     1000     V
 Collector Emitter Voltage    : BUT11A     VCEO            400     V
                              : BUT11                      450     V
 Emitter Base Voltage         : BUT11A     VEBO             9      V                     1.Base 2.Collector 3.Emitter
 Collector Current (DC)                    IC               5      A
 Collector Current (Pulse)                 IC              10      A
 Base Current (DC)                         IB               2      A
 Base Current (Pulse)                      IB               4      A
 Collector Dissipation ( T C=25)           PC              100    W
 Junction Temperature                      TJ              150    
 Storage Temperature                       T STG     -65 ~ 150    
ELECTRICAL CHARACTERISTICS (Tc =25)

                   Characteristic                        Symbol          Test Conditions          Min   Typ   Max       Unit
*Collector-Emitter Sustaining Voltage    : BUT11    VCEO (sus)    IC = 100mA, IB = 0              400                    V
                                         : BUT11A                                                 450                    V
 Collector Cutoff Current                : BUT11    ICES          VCE = 850V, VBE = 0                            1      mA
                                         : BUT11A                 VCE = 1000V, VBE = 0                           1      mA
 Emitter Cutoff Current                             IEBO          VBE = 9V, IC = 0                              10      mA
 Collector Emitter Saturation Voltage    : BUT11    VCE(sat)      IC = 3A, IB = 0.6A                           1.5       V
                                         : BUT11A                 IC = 2.5A, IB = 0.5A                         1.5       V
 Base Emitter Saturation Voltage         : BUT11    VBE(sat)      IC = 3A, IB = 0.6A                           1.3       V
                                         : BUT11A                 IC = 2.5A, IB = 0.5A                         1.3       V
 Turn On Time                                       tON           VCC = 250V, IC = 2.5A                          1      uS
 Storage Time                                       tSTG          IB1 = IB2 = 0.5A                               4      uS
 Fall Time                                          tF                                                         0.8      uS

* Pulsed Test: PW = 300uS, duty cycle = 1.5%
BUT11/11A   NPN SILICON TRANSISTOR

◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo