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KSC2500                                              NPN EPITAXIAL SILICON TRANSISTOR

MEDIUM POWER AMPLIFIER
LOW SATURATION                                                                      TO-92L




ABSOLUTE MAXIMUM RATINGS (TA=25 )                       
         Characteristic                Symbol           Rating           Unit

Collector-Base Voltage             VCBO                   30              V
Collector-Emitter Voltage          VCES                   30              V
Collector-Emitter Voltage          VCBO                   10              V
Emitter-Base Voltage               VEBO                    6              V
Collector Current (DC)             IC                      2              A
%Collector Current (Pulse)         IC                      5              A
Base Current                       IB                     0.5             A
Collector Dissipation                                                    mW
                                                                         &
                                   PC                    900
Junction Temperature               TJ                    150
Storage Temperature                T STG               -55 ~150          &
%PW   10ms, Duty Cycle  30%                                                               1. Emitter 2. Collector 3. Base



ELECTRICAL CHARACTERISTICS (TA=25 )                         
                Characteristic                    Symbol              Test Conditions        Min      Typ       Max         Unit

Collector Cut-off Current                       ICBO              VCB=30V, IE=0                                  100        nA
Emitter Cut-off Current                         IEBO              VEB=6V, IC=0                                   100        nA
Collector-Emitter Breakdown Voltage             BVCBO             IC=10mA, IB=0               10                            V
Emitter Base Breakdown Voltage                  BVEBO             IE=1mA, IC=0                 6                            V
DC Current Gain                                 hFE 1             VCE=1V, IC=0.5A            140                 600
                                                hFE 2             VCE=1V, IC=2A               70       200
Collector Emitter Saturation Voltage            VCE (sat)         IC=2A, IB=50mA                       0.2       0.5         V
Base Emitter On Voltage                         VBE (on)          VCE=1V, IC=2A                       0.86       1.5         V
Current Gain Bandwidth Product                  fT                VCE=1V, IC=0.5A                     150                   MHz
Output Capacitance                              COB               VCB=10V, IE=0, f=1MHz                 27                   pF




hFE(1) CLASSIFICATION
  Classification             A             B                  C                 D

       hFE(1)            140-240         200-330            300-450       420-600
KSC2500   NPN EPITAXIAL SILICON TRANSISTOR

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