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Advanced Power MOSFET                                              SSP4N80AS
FEATURES
                                                                    BVDSS = 800 V
   Avalanche Rugged Technology
   Rugged Gate Oxide Technology
                                                                    RDS(on) = 3.0 
   Lower Input Capacitance                                          ID = 4.5 A
   Improved Gate Charge
   Extended Safe Operating Area
   Lower Leakage Current : 25 

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